Circuit Fabrication/Thin Film Hybrid Components

Thin film circuit fabrication and thin film component manufacturing is performed using both wet and dry etching (ion milling and RIE) techniques.

Components are manufactured to your designs utilizing either Au or Cu based conductors and TaN or NiCr resistors if required. Circuits with through hole vias, front and back metallizations can be accommodated. Standard substrate materials are polished or as fired 99.6% Alumina, polished or lapped AlN, Diamond, and Quartz.

Please forward your drawings to our engineering staff for quotations or help with designs.



  • TaN-Standard is 50 ohms/sq. Values from 25 to 200 ohms/sq.
  • TCR is -100 +/-50 ppm/C
  • Stabilization 425C for 30 minutes, Lower temperature stabilization required for TaN/TiW/Ni/Au to prevent Ni diffusion, 325C for 60 minutes is usual.
  • Layout for laser trimming is 80% of nominal value
  • Layout for passivation is 100% of nominal value, +/- 10%
  • NiCr-Standard is 50 to 150 ohms/sq.
  • TCR value is 0 +/- 50 ppm/C
  • Stabilization is 325C for up to 60 minutes
  • Layout for laser trimming is 80% of nominal value
  • Layout for passivation is 100% of nominal value +/- 10%
  • Usual TiW thickness on stack is 250 to 500A
  • Usual Ni thickness is 2500A
  • Resistor length and width: 2 mil minimum
  • Conductor overlay minimum: 1 mil

General Layout Rules

  • Minimum line width and gap width, 1 mil, Tolerance +/- 0.0002″
  • Metallized or clearance holes-Absolute location +/- 0.002″
  • Hole taper 10-20% of substrate thickness
  • Metallized hole minimum 0.005″, capture pad minimum 0.005″
  • Minimum diameter 1:1 aspect ratio of substrate thickness
  • Laser cutouts-0.006″ minimum radius
  • Minimum separation of laser holes is substrate thickness
  • Metallization pullback from edge 0.002″
  • Front to back registration +/-0.002″
  • Diamond dicing-L and W +/-0.001″

Call with any questions or for specials